7/12/00 db92125m-aas/a1 option g 7.62 0.26 0.5 dimensions in mm sur face mount option sm 10.16 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4. 0 3. 0 2.54 0.26 7.62 6.62 0.5 appro v als l ul recognised, file no. e91231 'x' specific ation appro v als ll TIL111x is vde 0884 approved in 3 available lead forms : - - std - g form - smd approved to cecc 00802 til114x, til116x, til117x : - vde 0884 pending l TIL111x is certified to en60950 by the following test bodies :- nemko - certificate no. p96101299 fimko - registration no. 190469-01..22 semko - reference no. 9620076 01 demko - reference no. 305567 til114x, til116x, til117x : - en60950 pending description the TIL111, til114, til116, til117 series of optically coupled isolators consist of infrared light emitting diode and npn silicon photo transistor in a standard 6 pin dual in line plastic package. fe atures l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high isolation v oltage (5.3kv rms ,7.5kv pk ) applic ations l dc motor controllers l industrial systems controllers l signal transmission between systems of different potentials and impedances til 11 1x, til 114x, til 116x, til 117x til 11 1, til 114, til116, til117 optical ly coupled isol ator phototransistor output 1 3 4 6 2 5 absolute maximum r atings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse v oltage 6v power dissipation 105mw output transistor collector-emitter v oltage bv ceo 30v collector-base v oltage bv cbo 70v emitter-collector v oltage bv eco 6v power dissipation 160mw power dissi pa tion total power dissipation 200mw (derate linearly 2.67mw/ c above 25c) isocom components ltd unit 25b, park view road west, park v iew industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://ww w .isocom.com 10.46 9.86 0.6 0.1 1.25 0.75
db92125m-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 16ma reverse voltage (v r ) 6 v i r = 10 m a reverse current (i r ) 10 m a v r = 6v output collector-emitter breakdown (bv ceo ) 30 v i c = 1ma ( note 2 ) collector-base breakdown (bv cbo ) 70 v i c = 100 m a emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i ceo ) 50 na v ce = 10v collector-base dark current (i cbo ) 20 na v ce = 10v transistor static gain ( h fe ) 200 10ma i c , 5v v ce coupled on-state collector current (i c on) TIL111, til114 20 % 16ma i f , 0.4v v ce til116 20 % 10ma i f , 10v v ce til117 50 % 10ma i f , 10v v ce collector-emitter saturation voltagev ce(sat) TIL111, til114 0.4 v 16ma i f , 2ma i c til116 0.4 v 15ma i f , 2.2ma i c til117 0.4 v 10ma i f , 0.5ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 10 m s v cc = 10v , i c = 2ma output fall time tf 10 m s r l = 100 w fig 1 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 7/12/00 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l = 100 w input 10% 90% 90% 10% t on t r fig 1 v cc t off t f
db92125m-aas/a1 7/12/00 50 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 100 forward current i f (ma) 70 80 -30 0 25 50 75 100 125 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio forward current i f (ma) 1 2 5 10 20 50 0 1.2 1.6 2.0 2.4 2.8 v ce = 0.4v t a = 25c relative current transfer ratio forward current i f (ma) 0.8 0.4 0 0.5 1.0 1.5 i f = 10ma v ce = 10v relative current transfer ratio ambient temperature t a ( c ) -30 0 25 50 75 100 ambient temperature t a ( c ) 0 0.5 1.0 1.5 i f = 16ma v ce = 0.4v relative current transfer ratio -30 0 25 50 75 100 relative current transfer ratio vs. forward current ( TIL111, til114 ) relative current transfer ratio vs. forward current ( til116, til117 ) relative current transfer ratio vs. ambient temperature ( TIL111, til114 ) relative current transfer ratio vs. ambient temperature ( til116, til117 )
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